13.1 Influence of MOCVD Growth Conditions on the Two-dimensional Electron Gas in AlGaN/GaN Heterostructures
نویسندگان
چکیده
The influence of MOCVD growth conditions (carrier gas, growth temperature, and V/III ratio) on the AlGaN barrier and the corresponding 2DEG for AlGaN/GaN heterostructures grown on 150 mm silicon is investigated. Hall mobility 2200 cm 2 /V.s, with sheet carrier concentration 8.7e10 12 cm -2 and sheet resistance 326 Ohm/sq, is obtained for AlGaN grown in N2 ambient and with high V/III ratios.
منابع مشابه
Dopant-free GaN/AlN/AlGaN radial nanowire heterostructures as high electron mobility transistors.
We report the rational synthesis of dopant-free GaN/AlN/AlGaN radial nanowire heterostructures and their implementation as high electron mobility transistors (HEMTs). The radial nanowire heterostructures were prepared by sequential shell growth immediately following nanowire elongation using metal-organic chemical vapor deposition (MOCVD). Transmission electron microscopy (TEM) studies reveal t...
متن کاملSurface Morphology and Electronic Properties of Dislocations in AlGaN/GaN Heterostructures
110 The AlGaN/GaN heterstrostructures with its intrinsic two-dimensional electron gas (2DEG) is a promising materials system for high speed, high power, and high temperature electronics. Recently, it has been shown that the electron mobility (μ) of the 2DEG can exceed 50,000 cm2/Vs at low temperatures.1,2 Based on what is known about the 2DEG system in AlGaAs/GaAs heterostructures, growth morph...
متن کاملDetermination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition
Resistivity and Hall effect measurements on nominally undoped Al0.25Ga0.75N/GaN/AlN heterostructures grown on sapphire substrates prepared by metal organic chemical vapor deposition have been carried out as a function of temperature (20–300 K) and magnetic field (0–1.4 T). Variable magnetic field Hall data have been analyzed using the improved quantitative mobility spectrum analysis technique. ...
متن کاملوابستگی انرژی گذارهای اپتیکی در نانوساختارهای چاههای کوانتومی GaN/AlGaN به پهنای سد و چاه کوانتومی
Internal polarizations field which take place in quantum structures of group-III nitrides have an important consequence on their optical properties. Optical properties of wurtzite AlGaN/GaN quantum well (QW) structures grown by MBE and MOCVD on c-plane sapphire substrates have been investigated by means of photoluminescence (PL) and time resolved photoluminescence (TRPL) at low-temperature. PL ...
متن کاملTechnology focus: GaN HEMTs
has been developing III-nitride double heterostructures (DHs) with indium gallium nitride (InGaN) channels with a view to high-electron-mobility transistors (HEMTs) [Yi Zhao et al, Appl. Phys. Lett., vol105, p223511, 2014]. The resulting structures boast the highest reported mobility for InGaN channels and superior transport at high temperature, according to the research team. Nitride semicondu...
متن کامل